Manufacturer: Fairchild Semiconductor Product Category: IGBT Transistors RoHS: Details
Package / Case: TO-3P
Collector- Emitter Voltage VCEO Max: 1200 V Collector-Emitter Breakdown Voltage: 1200 V Collector-Emitter Saturation Voltage: 2 V Maximum Gate Emitter Voltage: 20 V Continuous Collector Current Ic Max: 50 A Gate-Emitter Leakage Current: +/- 250 nA Power Dissipation: 312 W Packaging: TUBE Configuration: Single 飞捷电子专业代理仙童的全线产品。