- 发布
- 深圳市鑫融宸电子有限公司
- 价格
- ¥7.60/个
- Vdd
- 1.5V +0.075V
- 封装
- FBGA
- 容量
- 4Gb
- 手机
- 15914053950
- 发布时间
- 2024-06-04 11:16:44
GENERAL DESCRIPTION
The PRN256M16V00HG8GNF-125 is a high performance dynamic random-access 4Gb device. These components are organized in a x16 configuration, and utilize 8 bank architecture with a synchronous DDR3 interface. These DDR3 SDRAM components use double data rate architecture to achieve high speed operation.
Features
Vdd = VddQ = 1.5V +0.075V 1.5V center-terminated push / pull I/O Differential bidirectional data strobe 8n-bit prefetch architecture Differential clock inputs (CK, CK#) 8 internal banks Nominal and dynamic on-die termination (ODT) For data, strobe, and mask signals Programmable CAS READ latency (CL) Posted CAS additive latency (AL) Programmable CAS WRITE latency (CWL) based on tCK Fixed burst length (BL) of 8 and burst chop (BC) of 4 (via the mode register set [MRS] Selectable BC4 or BL8 on-the-fly (OTF) Self refresh mode Tc of 0C to +95C 64ms 8192 cycle refresh at 0C to 85C 32ms 8192 cycle refresh at +85C to +95C Self refresh temperature (SRT) Write leveling Multipurposes register Output driver calibration