EM6AA160TSE-5G SDRAM EtronTech 钰创 TSSOP66 全新原装现货集成电路

Overview 

The EM6AA160 SDRAM is a high-speed CMOS  double data rate synchronous DRAM containing 256  Mbits. It is internally configured as a quad 4M x 16  DRAM with a synchronous interface (all signals are  registered on the positive edge of the clock signal,  CK). Data outputs occur at both rising edges of CK  and  CK . Read and write accesses to the SDRAM  are burst oriented; accesses start at a selected location and continue for a programmed number of locations  in a programmed se Accesses begin with the  registration of a BankActivate command which is  then followed by a Read or Write command. The  EM6AA160 provides programmable Read or Write  burst lengths of 2, 4, or 8. An auto precharge function  may be enabled to provide a self-timed row precharge that is initiated at the end of the burst se The  refresh functions, either Auto or Self Refresh are easy  to use. In addition, EM6AA160 features programmable DLL option. By having a programmable mode register  and extended mode register, the system can choose  the most suitable modes to maximize its performance.  These devices are well suited for applications re high memory bandwidth; result in a device particularly  well suited to high performance main memory and  graphics applications.