SKKH250/14E因元件开关损耗显着增加,允许通过的平均电流相降低,此时,标称电流应降级使用.
可控硅的优点很多,例如:以小功率控制大功率,功率放大倍数高达几十万倍;
反应极快,在微秒级内开通、关断;无触点运行,无火花、无噪音;效率高,成本低等等.
可控硅的弱点:静态及动态的过载能力较差;容易受干扰而误导通.
可控硅从外形上分类主要有:螺栓形、平板形和平底形.
可控硅元件的结构
不管可控硅的外形如何,它们的管芯都是由P型硅和N型硅组成的四层P1N1P2N2结构.见图1.
它有三个PN结(J1、J2、J3),从J1结构的P1层引出阳极A,从N2层引出阴级K,从P2层引出控制极G,
所以它是一种四层三端的半导体器件. 可控硅结构示意图和符号图
可控硅元器件的工作原理
西门康可控硅
SKKT92B14E
SKKT92B16E
SKKT92B18E
SKKT106B08E
SKKT106B12E
SKKT106B14E.
SKKT106B16E
SKKT106B18E
SKKH15/12E
SKKH15/16E
SKKH20/12E
SKKH20/16E
SKKH26/12E
SKKH26/16E
SKKH27/12E
SKKH27/16E
SKKH41/12E
SKKH41/16E
SKKH42/12E
SKKH42/16E
SKKH56/12E
SKKH56/16E
SKKH57/12E
SKKH57/16E
SKKH71/12E
SKKH71/16E
SKKH72/12E
SKKH72/16E
SKKH91/12E
SKKH91/16E
SKKH92/12E
SKKH92/16E
SKKH105/12E
SKKH105/16E
SKKH106/12E
SKKH106/16E
SKKH122/12E
SKKH122/16E
SKKH131/12E
SKKH131/16E
SKKH132/12E
SKKH132/16E.
SKKH161/12E
SKKH161/16E
SKKH162/12E
SKKH162/16E.
SKKH172/12E
SKKH172/16E
SKKH210/12E
SKKH210/16E
SKKH213/12E
SKKH213/16E
SKKH250/12E
SKKH250/14E
SKKH250/16E
富士达林顿
1DI300Z-120
1DI300Z-140
1DI150GF-100
1DI300ZN-120
1DI300ZP-120
1DI200A-120
1DI200A-140
1DI150GE-100
1DI400A-120
1DI200M-120
1DI400X-120
1DI200ZN-120
1DI400MN-120
1DI200ZP-120
1DI400MP-120
1DI300B-120
1DI200ZA-120
1DI800A-120
1DI300A-120
1DI300A-140
1DI300X-120
2DI30D-050A
2DI200M-050
2DI50D-050A
2DI200A-050
2DI75D-050A
2DI300A-050
2DI100D-050
2DI75D-055A
2DI150D-050
2DI240A-055
2DI30M-050
2DI75S-050
2DI50M-050
EVG31-050A
2DI75M-050
EVF31T-050A
2DI100M-050
EVK31-050
2DI100MA-050
EVK71-050
2DI150M-050
EVM31-050A
2DI150MA-050
EVL31-055
艾赛斯整流桥
VUO85-14NO7 VRRM (V) 1400 IDAVM (A) 85 IFSM 10ms Tvj=45°C (A) 750