IGN1214M650A是最适合L波段雷达应用的高功率GaN晶体管。 该晶体管被指定用于AB类工作，提供1.2-1.4 GHz的工作频率，最小650W的峰值脉冲功率，50V和10％的占空比。 该单元采用金线技术通过芯片和线材技术组装，装在基于金属的封装中，并用陶瓷环氧树脂盖密封。
特征
GaN on SiC HEMT技术
650W输出功率
AB类操作
预先匹配的内部阻抗
经过100％大功率射频测试
负栅极电压/偏置排序
产品应用
通信
相关型号
IGN0110UM100IGN1012S40IGN1214L30IGN2729M500
IGN0160UM12IGN1011L1000R2IGN1214L500BIGN2730M65
IGN0450M850IGN1011L120IGN1214M120IGN2731L10
IGN0450M250IGN1011L1200IGN1214M250IGN2731M120
IGN450M160IGN1011L20-PB*IGN1214M300IGN2731M130
IGN0450L1250IGN1011L20-SPIGN1214M380CIGN2731M180
IGN0450M1500IGN1011L60IGN1214M500IGN2731M200
IGN0912CW10IGN1011L70IGN1214M500R2IGN2731M250
IGN0912CW150IGN1011M15IGN1214M60IGN2731M5
IGN0912CW300IGN1011M400IGN1214M600IGN2731M80
IGN0912L125AIGN1011M600IGN1214M650AIGN2732M10
IGN0912L250AIGN1011M800IGN1214S1000BIGN2856S40
IGN0912L250MIGN1030L1000IGN1315M650IGN2856S500
IGN0912L45IGN1030L800IGN2429M400IGN2932M75
IGN0912L500IGN1030M40IGN2729M200IGN2998S500
IGN0912LM500IGN1030M800IGN2729M250CIGN3135L115
IGN1012L40IGN1090M800IGN2729M400IGN3135L12
IGN1012S1000IGN1214L125IGN2729M400R2IGN3135M135
IGN1012S30IGN1214L15IGN2729M400R3IGN3135M250
IGN5259M80R2IGN3842M130
